Focus on silicon carbide epitaxial wafer for 13 years
Worlds leading silicon carbide epitaxial wafer manufacturers
TYSiC can Provide 4-inch and 6-inch epitaxial wafers for fabrications of power devices including SBD JBS PiN MOSFET JFET BJT GTO & IGBT from 600V up to 3300V.
SiC epitaxial wafer
TYSiC can Provide 4-inch and 6-inch epitaxial wafers for fabrications of power devices including SBD, JBS, PiN, MOSFET, JFET, BJT, GTO & IGBT from 600V up to 3300V.
Download:
Specification of TYSiC 2021-150mm-Hi Grade.pdf
